2002. 5. 14
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA2017
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
High Voltage : V
CEO
=-120V.
Excellent h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
High h
FE
: h
FE
=200700.
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTC4077.
MAXIMUM RATING (Ta=25)
DIM
MILLIMETERS
A
B
D
E
1. EMITTER
2. BASE
3. COLLECTOR
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
M
0.42 0.10
N
0.10 MIN
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25)
Note : h
FE
Classification GR(6):200400 BL(8):350700
h Rank
Type Name
Marking
C
FE
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
mA
Base Current
I
B
-20
mA
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-120V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=-6V, I
C
=-2mA
200
-
700
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10mA, I
B
=-1mA
-
-
-0.3
V
Transition Frequency
f
T
V
CE
=-6V, I
C
=-1mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
4.0
-
pF
Noise Figure
NF
V
CE
=-6V, I
C
=-0.1mA
f=1kHz, Rg=10k
-
1.0
10
dB
PDF 
ZIP